Silicon Carbide (SiC) Wafers and Substrates 1. 4H-SiC N-Type Wafer Substrate Diameter: 4″ up to 6″ Grade: Production, Research, Dummy Thickness: 350µm or 500µm Micropipe Density: 0.5/cm² up to 10/cm² Resistivity: 0.015 – 0.025 ohm.cm 2. 4H-SiC Semi
FOB Price | $50 - 100 / Piece |
Min.Order Quantity | 10 Piece / Pieces |
Supply Ability | 5000000 Piece / Pieces per Month |
Port | Shanghai |
Company Profile
Business Type | Manufacturer |
Year Established | 2014 |
We Provide | Precision Slits and Pinholes ,High Power Pinholes ,Mounted slits and pinholes ,Round aperture ,Optical slit on Glass ,Sapphire Products ,SiC Crystal and Substrates Customization ,Custom patterned ITO glass circuits ,Custom Sapphire Parts ,Micro flow ,Micro works ,Precision Slits |
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